| PART |
Description |
Maker |
| CY14B108M-ZSP25XI CY14B108M-ZSP45XIT CY14B108K-ZS4 |
8-Mbit (1024 K 8/512 K 16) nvSRAM with Real Time Clock
|
Cypress
|
| CY14B108K12 CY14B108K-ZS45XIT CY14B108K-ZS25XI CY1 |
8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| IDT72210 IDT72210L12TC IDT72210L12TCB IDT72210L12T |
CMOS SyncFIFOO 64 x 8 256 x 8 512 x 8 1024 x 8 2048 x 8 and 4096 x 8
Dual High Output Current Operational Amplifier 8-SOIC -40 to 85
Current-Mode PWM Controller 8-PDIP 0 to 70
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 856 × 812 × 8024 × 8048 × 8096 × 8
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 2K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 4K X 8 OTHER FIFO, 25 ns, CDIP28
High-Performance Current-Mode PWM Controller 14-SOIC 0 to 70 64 X 8 OTHER FIFO, 12 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 256 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, PDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 512 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 8256 × 812 × 81024 × 8048 × 8096 × 8
Dual High Output Current Operational Amplifier 8-PDIP -40 to 85
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT7280 IDT7280L IDT7280L12 IDT7280L12PA IDT7280L1 |
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9DUAL 1024 x 9 DUAL 2048 x 9DUAL 4096 x 9 DUAL 8192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9 DUAL 1024 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
|
IDT[Integrated Device Technology]
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| LH540215 LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO
|
SHARP[Sharp Electrionic Components]
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
|
